Mon07062020

Last updateFri, 03 Jul 2020 5pm

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Tunable temperature and measuring angle holder for film and powder samples

Researchers from the CSIC and the Catalan Institute of Nanoscience and Nanotechnology (ICN2-BIST) have developed and patented a sample holder for measuring films or powder samples in a fluorimeter or a UV-Vis-NIR spectrometer in transmission or reflection modes. The holder allows controlled temperature conditions, and an adaptable measuring angle. The device is customizable to adapt to the diverse commercial instruments.

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New magnetic resonance imaging (MRI) contrast agents based on organic metal-free dendrimers

Magnetic resonance imaging (MRI) is a commonly used clinical imaging technique for noninvasive diagnosis and characterization of soft tissues. The technique provides images in excellent detail of tumors and related pathological conditions thanks to the contrast agents used in the procedure.

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Transformation of used batteries in biocatalysts: circular and sustainable economy

A team from the Centro de Investigaciones Biológicas of the CSIC (CIB-CSIC) has developed an application for the sustainable reuse of components of dead batteries. The scientists have synthesized esters by biocatalysis, using the material obtained from the black mass of batteries and an enzyme, through a selective and clean reaction.

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Scientists develop a device that differentiates, in a single step and without markers, tumour cells from healthy cells

A CSIC team has designed a method and a device that differentiates, in a single analysis, different cells or particles present in a fluid. The prototype has been tested, and the results have been published and featured on the cover of ACS Sensors. The system has been patented and now the scientific team is looking for companies interested in a license agreement for its commercial exploitation.

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Switch device for high power and radioactive environments

CSIC scientists at the Instituto de Microelectrónica de Barcelona - Centro Nacional de Microelectrónica have developed a novel JFET (Junction Field-Effect Transistor) which is very suitable for high-power devices and radioactive environments, where conventional JFET fail. Due to its particular configuration, the device presents very high radiation hardness.

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