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Last updateMon, 11 Nov 2019 1pm

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Switch device for high power and radioactive environments

CSIC scientists at the Instituto de Microelectrónica de Barcelona - Centro Nacional de Microelectrónica have developed a novel JFET (Junction Field-Effect Transistor) which is very suitable for high-power devices and radioactive environments, where conventional JFET fail. Due to its particular configuration, the device presents very high radiation hardness.

 

The new JFET devices can be applied in high radioactive environments, where standard JFET fail. JFET devices are widely used as switches or as a passive protection element. However, none of them is ideal for high radiation applications because their fabrication request the use of an inter-level oxide, which fails under expositions to high radiations level. Furthermore, the use of n-doped substrates in electronics devices to improve their electrical properties increases their vulnerability to the radiation, making them not suitable to operate in high radiation environments.

Thus, an issue of modern power electronics is to develop appropriate devices for power distribution circuits and systems control that are capable of operating in high radiation environments. 

CSIC scientists at the at the Instituto de Microelectrónica de Barcelona - Centro Nacional de Microelectrónica have developed a JFET device which has a very high radiation hardness. It is suitable for environments such as space, aeronautics, as well as nuclear power plants or radiomedical equipment.

It can be applied also in energy applications as switch device in high power systems. Its main advantages are, among others, the high robustness to ionizing and non-ionizing radiation damage; SEE (Single Event Effects) robustness due to its bulk configuration; improved device design, which allows a higher carrier injection into the channels and therefore higher current densities; high active area ratio (~90%); a very high breakdown voltage (> 800 V); and full custom design capability for specific application.

Industrial partners from the electronic industry focused on radiation detection or power distribution under radiation environments are sought to collaborate through a patent licence agreement.

Contact:

Isabel Gavilanes
Deputy Vice-Presidency for
Knowledge Transfer
Spanish National Research
Council (CSIC)
Tel.: +34 – 93 594 77 00
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